91 lines
2.1 KiB
C
91 lines
2.1 KiB
C
/*
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*Copyright (C),2023 , NANOCHAP
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*File name: ENS1_MTP.C
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*Author:
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*Version: V1.0
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*Date: 2023-11-
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*Description:
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*Function List:
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History:
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1.V1.0
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Date:
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Author:
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Modification: 初版
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*/
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/*
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MTP说明
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1、MTP部分只能按块写入,每块有1024字节大小
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块的编号：
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SECTOR 0 : 0000H - 03FFH
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SECTOR 1 : 0400H - 07FFH
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SECTOR 2 : 0800H - 0BFFH
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SECTOR 3 : 0C00H - 0FFFH
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SECTOR 4 : 1000H - 13FFH
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SECTOR 5 : 1400H - 17FFH
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SECTOR 6 : 1800H - 1BFFH
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SECTOR 7 : 1C00H - 1FFFH
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*/
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#include "ENS1_MTP.h"
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uint16_t write_current_data[4]={0,0,0,0};
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STRUCT_MTP_TRIM MTP_FT_SET=
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{
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.OSCA_FT = 0x10, //默认值为 0X10
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.OSC32K_RTRIM = 0x10, //默认值为 0X10
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.BG_TRIM = 0x88,
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};
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uint8_t MTP_init(void)
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{
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#ifdef ENS1_HSI_16MHz
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CMSDK_MTPREG->MTP_CR = 0x00000001;
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#elif ENS1_HSI_32MHz
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CMSDK_MTPREG->MTP_CR = 0x00000003;
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#endif
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return 0;
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}
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//MTP内保存的电流检测数据读取
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void flash_read(uint32_t start_addr,uint16_t *test_i){
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uint16_t result = 0;
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result = HW16_REG(start_addr);
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*test_i = result ;
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}
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//向MTP中写入数据（仅限于向用户自定义块写入！！！）
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//可自定义读写的区域为MTP的第0x1BC0块（MTP_BASE_ADDR + 0x6F00）
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int8_t flash_buff_write(uint32_t start_addr, uint16_t *buff) {
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HW32_REG(start_addr) = ((uint32_t)((*(buff+1)<<16)&0xffff0000) + ((*buff)&0x0000ffff));
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// while(!(CMSDK_MTPREG->MTP_SR&0x00000002)){};
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if(HW32_REG(start_addr) != ((uint32_t)(*(buff+1)<<16) + *buff ))
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{
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printf("write error\n");
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return -1;
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}
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return 0;
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}
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int8_t flash_write_ctrl(uint16_t *buff , uint32_t start_addr){
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CMSDK_MTPREG->MTP_CLR = 0xffffffff; //SR寄存器
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CMSDK_MTPREG->MTP_CR = 0x00000002; //2等待周期
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CMSDK_MTPREG->MTP_ACLR = 0x00000000; //允许软件读写从sector0 -sector 6 （sector7 作为bootloader区）
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CMSDK_MTPREG->MTP_KEYR = 0x5a5a5a5a; //key
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return flash_buff_write(start_addr, buff);
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}
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int8_t write_data(void){
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uint16_t *wr_data = (uint16_t *)malloc(8*sizeof(uint8_t));
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memcpy(wr_data , write_current_data, 8);
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int8_t val = flash_write_ctrl(wr_data,DATA_SAVE_ADDR); //第 0x1BC0块
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val = flash_write_ctrl(wr_data+2, DATA_SAVE_ADDR + 4);
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return val;
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}
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